NJG1812 Series
High Power DPDT Switch GaAs MMIC
NJG1812 Series
High Power DPDT Switch GaAs MMIC
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Description
The NJG1812ME4 is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications. The NJG1812ME4 features very low insertion loss, low distortion and excellent linearity performance down to 1.8V 1bit control voltage at high frequency up to 3GHz. In addition, this switch is able to handle high power signals. The NJG1812ME4 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the small & thin EQFN12-E4 package is adopted.
Applications
- Antenna swapping, General purpose switching applications
- LTE, UMTS, CDMA, GSM systems
Spec
Standard | Automotive | |
---|---|---|
Product Name | NJG1812ME4 | NJG1812AMET-A |
P-0.1dB | Typ. 36dBm | |
Power Level | High Power | |
Insertion Loss | 0.25dB typ. @f=900MHz, PIN=+35dBm 0.35dB typ. @f=1900MHz, PIN=+33dBm 0.45dB typ. @f=2700MHz, PIN=+27dBm |
|
Frequency Range | 0.2GHz to 3GHz | 0.7GHz to 2.7GHz |
Package Size | 2.0x2.0x0.427(max.) mm | 2.0x2.0x0.83(max.) mm |
Low Control Voltage | VCTL(H)=1.35V to 5.0V | |
Voltage Operation | VDD=2.7V typ. | |
Wide Operating Temperature | -40°C to 105°C | |
Junction Temp. | 150°C | |
Package | EQFN12-E4 | EQFN12-ET |
AEC-Q100 | AEC-Q100 grade 2 |
Technical Documents
Quality & Packages
Product Name | Compatibility | Package | Marking | Reliability |
---|---|---|---|---|
NJG1812ME4 |
|
EQFN12-E4 | - | NJG-1-s-r |
NJG1812AMET-A |
|
EQFN12-ET | - | - |
- Refer to the datasheets for the details on the product.
- The package file or the datasheet includes package dimensions, taping specifications, taping reels dimensions, power dissipations, and recommended land pattern.
FAQ
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NJG1812 Series