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Foundry Service

  • Kawagoe Plant

    As a leading foundry manufacturer for analog and mixed-signal products, Nisshinbo Micro Devices Inc. offers highly reliable process technologies, which are well optimized in our own product development.
    The technologies are ranging from 4.0 to 0.35um, and Bipolar, CMOS with HVMOS, high speed BiCMOS, and BCD. Since the technologies are available on 5", and 8" wafers, Nisshinbo Micro Devices can appropriately respond to wide range production volume with our two manufacturing fab and UMC' 8" fab.

    Leading technologies

    Process

    Process PDF Details
    Complimentary 40V High Speed Bipolar with TFR
    Application : OpAmp     		126KB 2.0µm rule
    NPN ft= 2.9GHz, Vertical PNP ft= 3.7GHz
    Wafer Size 5"
    High Speed BiCMOS
    Application : Industrial, Visual, Sensor AFE     		217KB 0.8μm rule
    Bipolar 10V NPN ft= 8.0GHz, Vertical PNP ft= 5.5GHz, CMOS 5V
    Wafer Size 5"
    Analog CMOS+HV
    Application : Power Supply, Audio, OpAmp     		212KB 0.7µm rule
    LV 5V, HV 20V/30V/36V
    Wafer Size 5"
    BCD
    Application : Power Supply, OpAmp    		 128KB 0.35µm rule
    Bipolar 15V NPN, LPNP, CMOS 3.3V/5.0V, DMOS 40V/50V
    Wafer Size 8"(*1)
    Analog CMOS+HV
    Application : Power Supply, OpAmp     		Please contact us. 0.35µm rule
    LV 3.3V, MV 5.0V, HV 12～36V
    Wafer Size 8"(*1)

    (*1):This process was developed in cooperation with UMC.

    Inspection items on foundry service

    • Process control monitor (Device characteristics)
    • Appearance defects

    Optional services

    • Wafer sort
    • Final Test
    • Package

    Product forms

    The PCM data is attached to the product at delivery.

    • Wafer
    • Bare die

    Business flow

    The standard business flow of foundry service is as follows.
    If you have any questions,please contuct us.

    Development Process Figure

    Contacts

    Thank you for your visit to our Foundry Service web site. Please click on the "contact" button.

  • Nisshinbo Micro Devices Fukuoka

    As a leading foundry manufacturer for analog and mixed-signal products, Nisshinbo Micro Devices Fukuoka Co., Ltd. offers highly reliable process technologies, which are well optimized in our own product development.
    The technologies are ranging from 4.0 to 2.0um, and Bipolar process. Since the technologies are available on 5", and 6" wafers.

    Leading technologies

    Process

    Process PDF Details
    40V Bipolar
    Application : OpAmp    		 69KB 3.0µm rule
    NPN ft= 0.69GHz, Lateral PNP ft= 5.85MHz
    Wafer Size 5"
    40V Bipolar with VPNP (Under development)
    Application : OpAmp (Scheduled to be developed)     		69KB 3.0µm rule
    Wafer Size 6"
    9V Bipolar with VPNP
    Application : Industrial, Information     		43KB 2.0µm rule
    NPN ft= 6GHz, Vertical PNP ft= 1.5GHz
    Wafer Size 5"
    40V Bipolar with VPNP
    Application : Industrial     		43KB 2.0µm rule
    NPN ft= 2GHz, Vertical PNP ft= 80MHz
    Wafer Size 5"

    Inspection items on foundry service

    • Process control monitor (Device characteristics)
    • Appearance defects

    Optional services

    • Wafer sort
    • Final Test
    • Package

    Product forms

    The PCM data is attached to the product at delivery.

    • Wafer
    • Bare die

    Business flow

    The standard business flow of foundry service is as follows.
    If you have any questions,please contuct us.

    Development Process Figure

    Contacts

    Thank you for your visit to our Foundry Service web site. Please click on the "contact" button.

  • Yashiro Plant

    We offer Wafer Foundry Services of 150mm and 200mm process, by using CMOS analog processes cultivated by based on our own analog products. We would modify our analog processes according to customers' requirements flexibly. Please feel free to contact us.

    Technology: CMOS analog processes

    Nisshinbo Micro Devices' manufacturing service offers the following basic processes with Design Rules and Spice Parameters, including TEG's for the evaluation of Analog Characteristics.

    Process & Options

    Feature / Prosess  0.8 µm  0.6 µm  0.5 µm  0.35 µm
    Max. Operating Voltage for LV core Tr. 6.0 V 6.0 V 3.6 V / 6.5 V 3.3 V / 5.0 V / 6.5 V
    Multi Vth (Low , Dep)



    16 V Transistor Option  
    		 
    20 V Transistor Option  
    		   
    30 V Transistor Option  
    		   
    40 V Transistor Option  
    		   
    50 V Transistor Option  
    		   
    OTP/ E2PROM  
    		 
    BJT: Vertical/Lateral PNP  
    		VPNP VPNP
    Triple Well  


    Thin Film Resister

    		  TBA
    High Resistivity Polysilicon



    Low TC Resistor



    Depletion Capacitor



    PiP Capacitor  


    Laser Fuse Technology



    Number of Metal Layers 2 3 3 4
    Buffer Coat (PBO)



    Thick Metal Interconnect