Foundry Service

  • Kawagoe Plant , Fukuoka Plant

    As a leading foundry manufacturer for analog and mixed-signal products, Nisshinbo Micro Devices Inc. offers highly reliable process technologies, which are well optimized in our own product development. The technologies are ranging from 4.0 to 0.35um, and Bipolar, CMOS with HVMOS, high speed BiCMOS, and BCD. Since the technologies are available on 4", 5", and 8" wafers, Nisshinbo Micro Devices can appropriately respond to wide range production volume with our three manufacturing fab and UMC' 8" fab.

    Leading technologies


    Process PDF Details
    10 to 40V
    Wafer Size 5"
    ♦Complimentary 40V High Speed Bipolar 21KB 2.0µm rule
    Bipolar 40V NPN ft= 2.9GHz, Vertical PNP ft= 3.7GHz
    Wafer Size 5"
    ♦High Speed BiCMOS 218KB 0.8µm rule
    Bipolar 10V NPN ft= 8.0GHz, Vertical PNP ft= 5.5GHz
    CMOS 5V
    Wafer Size 5"
    ♦Analog CMOS+HV 21KB 0.7µm rule
    LV 5V, HV 20V/30V/36V
    Wafer Size 5"
    ♦BCD 19KB 0.35µm rule
    Bipolar 15V NPN, LPNP、CMOS 3.3V/5.0V、DMOS 40V/50V
    Wafer Size 8"(*1)
    ♦Analog CMOS+HV
    0.35µm rule
    LV 3.3V, MV 5.0V, HV 12~36V
    Wafer Size 8"(*1)

    (*1):This process was developed in cooperation with UMC.

    Guarantee items on foundry service

    • Process control monitor (Device characteristics)
    • Appearance defects

    Optional services

    • Wafer sort
    • Final Test

    Product forms

    The PCM data is attached to the product at delivery.

    • Wafer
    • Bare die
    • Package

    Business flow

    • The standard business flow of foundry service is as follows.
      If you have any questions,please contuct us.

      Development Process Figure
  • Yashiro Plant

    We offer Wafer Foundry Services of 150mm and 200mm process, by using CMOS analog processes cultivated by based on our own analog products. We would modify our analog processes according to customers' requirements flexibly. Please feel free to contact us.

    Technology: CMOS analog processes

    Nisshinbo Micro Devices' manufacturing service offers the following basic processes with Design Rules and Spice Parameters, including TEG's for the evaluation of Analog Characteristics.

    Process & Options

    Feature / Prosess  0.8 µm  0.6 µm  0.5 µm  0.35 µm
    Max. Operating Voltage for LV core Tr. 6.0 V 6.0 V 3.6 V / 6.5 V 3.3 V / 5.0 V / 6.5 V
    Multi Vth (Low , Dep)

    16 V Transistor Option  
    20 V Transistor Option  
    30 V Transistor Option  
    40 V Transistor Option  
    50 V Transistor Option  
    OTP/ E2PROM  
    BJT: Vertical/Lateral PNP  
    Triple Well  

    Thin Film Resister

    High Resistivity Polysilicon

    Low TC Resistor

    Depletion Capacitor

    PiP Capacitor  

    Laser Fuse Technology

    Number of Metal Layers 2 3 3 4
    Buffer Coat (PBO)

    Thick Metal Interconnect