High Power DPDT Switch GaAs MMIC

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  • Description

    The NJG1812ME4 is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications. The NJG1812ME4 features very low insertion loss, low distortion and excellent linearity performance down to 1.8V 1bit control voltage at high frequency up to 3GHz. In addition, this switch is able to handle high power signals. The NJG1812ME4 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the small & thin EQFN12-E4 package is adopted.


    • Antenna swapping, General purpose switching applications
    • LTE, UMTS, CDMA, GSM systems

  • Spec
    Function DPDT Switch
    P-0.1dB Typ. 36dBm
    Power Level High Power
    Insertion Loss 0.25dB typ. @f=900MHz, PIN=+35dBm
    0.35dB typ. @f=1900MHz, PIN=+33dBm
    0.45dB typ. @f=2700MHz, PIN=+27dBm
    Frequency Range 0.2GHz to 3GHz
    Package Size Typ. 2.0x2.0x0.397 mm
    Low Control Voltage VCTL(H)=1.35V to 5.0V
    Voltage Operation VDD=2.7V typ.
    Wide Operating Temperature -40°C to 105°C
    Junction Temp. 150°C
    Package EQFN12-E4
    Low distortion 2nd harmonics=-89dBm typ. @ f=786.5MHz, PIN=+23dBm
    3rd harmonics=-89dBm typ. @ f=710MHz, PIN=+23dBm
  • Technical
  • Quality &
    • Refer to the datasheets for the details on the product.
    • The package file or the datasheet includes package dimensions, taping specifications, taping reels dimensions, power dissipations, and recommended land pattern.

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Functional Description

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