High Power DPDT Switch GaAs MMIC

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  • Description

    The NJG1812AMET-A is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications. This switch features very low insertion loss, low distortion and excellent linearity performance with 1.8V 1bit control voltage at high frequency up to 3 GHz. Integrated ESD protection device on each port achieves excellent ESD robustness. No DC blocking capacitors are required for all RF ports unless DC is biased externally. EQFN12-ET package with wettable flank structure corresponds to Automated Optical Inspection (AOI).


    • Telematics, eCall
    • Antenna swapping, general purpose switching applications
    • LTE, UMTS, CDMA, GSM systems

  • Spec
    Function DPDT Switch
    P-0.1dB Typ. 36dBm
    Power Level High Power
    Insertion Loss 0.25 dB typ. @ f = 900 MHz, PIN = +35 dBm
    0.35 dB typ. @ f = 1900 MHz, PIN = +33 dBm
    0.45 dB typ. @ f = 2700 MHz, PIN = +27 dBm
    Frequency Range 0.7GHz to 2.7GHz
    Package Size Typ. 2.0x2.0x0.78 mm
    Low Control Voltage VCTL(H) = 1.35 V to 5.0 V
    Voltage Operation VDD = 2.7 V typ.
    Wide Operating Temperature -40°C to 105°C
    Junction Temp. 150°C
    Package EQFN12-ET
    AEC-Q100 AEC-Q100 grade 2 qualified
    Note Low harmonics (2fo = -89 dBm typ. @ f = 786.5 MHz, PIN = +23 dBm
    3fo = -89 dBm typ. @ f = 710 MHz, PIN = +23 dBm)
  • Technical
  • Quality &
    • Refer to the datasheets for the details on the product.
    • The package file includes package dimensions, taping specifications, taping reels dimensions, power dissipations, and recommended land pattern.
    • Please contact us or our distributors for unpublished reliability information.

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Functional Description

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